[1391PC Stock]
- Nimewo Pati:
- IRFB3607GPBF
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- MOSFET N-CH 75V 80A TO220AB.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - SCR - Modil yo, Transistors - Bipolè (BJT) - RF, Transistors - Bipolè (BJT) - Single, Tiristors - TRIACs, Transistors - Pwogramasyon Unijunction, Transistors - FETs, MOSFETs - Arrays, Diodes - Bridge rèktifikateur and Diodes - Varyab kapasite (Varicaps, Varactors) ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies IRFB3607GPBF electronic components. IRFB3607GPBF can be shipped within 24 hours after order. If you have any demands for IRFB3607GPBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRFB3607GPBF Atribi pwodwi yo
Nimewo Pati :
IRFB3607GPBF
Manifakti :
Infineon Technologies
Deskripsyon :
MOSFET N-CH 75V 80A TO220AB
Seri :
HEXFET®
Estati Pati :
Obsolete
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
75V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
80A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
9 mOhm @ 46A, 10V
Vgs (th) (Max) @ Id :
4V @ 100µA
Chaje Gate (Qg) (Max) @ Vgs :
84nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
3070pF @ 50V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
140W (Tc)
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-220AB
Pake / Ka :
TO-220-3
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