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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Arrays
  5. FDMD8560L

ON Semiconductor - FDMD8560L

KEY Part #: K6522144

FDMD8560L Pricing (USD) [52983PC Stock]

  • 1 pcs$0.74168
  • 3,000 pcs$0.73799
Nimewo Pati:
FDMD8560L
Manifakti:
ON Semiconductor
Detaye deskripsyon:
MOSFET 2N-CH 46V 22A POWER.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - Arrays, Diodes - RF, Transistors - FETs, MOSFETs - RF, Modil pouvwa chofè, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - IGBTs - Modil yo, Transistors - Bipolè (BJT) - Arrays, Pre-partial and Transistors - Bipolè (BJT) - Arrays ...
Avantaj konpetitif:
We specialize in ON Semiconductor FDMD8560L electronic components. FDMD8560L can be shipped within 24 hours after order. If you have any demands for FDMD8560L, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FDMD8560L Atribi pwodwi yo

Nimewo Pati : FDMD8560L
Manifakti : ON Semiconductor
Deskripsyon : MOSFET 2N-CH 46V 22A POWER
Seri : PowerTrench®
Estati Pati : Active
FET Kalite : 2 N-Channel (Half Bridge)
Karakteristik FET : Standard
Drenaj nan Voltage Sous (Vdss) : 60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 22A, 93A
RD sou (Max) @ Id, Vgs : 3.2 mOhm @ 22A, 10V
Vgs (th) (Max) @ Id : 3V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 128nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds : 11130pF @ 30V
Pouvwa - Max : 2.2W
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake / Ka : 8-PowerWDFN
Pake Aparèy Founisè : 8-Power 5x6

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