Nimewo Pati :
TK40E10N1,S1X
Manifakti :
Toshiba Semiconductor and Storage
Deskripsyon :
MOSFET N CH 100V 90A TO220
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
90A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
8.2 mOhm @ 20A, 10V
Vgs (th) (Max) @ Id :
4V @ 500µA
Chaje Gate (Qg) (Max) @ Vgs :
49nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
3000pF @ 50V
Disipasyon Pouvwa (Max) :
126W (Tc)
Operating Tanperati :
150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-220