Nimewo Pati :
STH80N10F7-2
Manifakti :
STMicroelectronics
Deskripsyon :
MOSFET N-CH 100V 80A H2PAK-2
Seri :
DeepGATE™, STripFET™ VII
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
80A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
9.5 mOhm @ 40A, 10V
Vgs (th) (Max) @ Id :
4.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
45nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
3100pF @ 50V
Disipasyon Pouvwa (Max) :
110W (Tc)
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
H2Pak-2
Pake / Ka :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB