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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Arrays
  5. MVDF2C03HDR2G

ON Semiconductor - MVDF2C03HDR2G

KEY Part #: K6523437

[4166PC Stock]

    Nimewo Pati:
    MVDF2C03HDR2G
    Manifakti:
    ON Semiconductor
    Detaye deskripsyon:
    MOSFET N/P-CH 30V 4.1A/3A 8SOIC.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Modil yo, Transistors - FETs, MOSFETs - Arrays, Tiristors - SCR, Transistors - IGBTs - Arrays, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Diodes - Rèkteur - Single, Transistors - Objektif espesyal and Transistors - Bipolè (BJT) - Single ...
    Avantaj konpetitif:
    We specialize in ON Semiconductor MVDF2C03HDR2G electronic components. MVDF2C03HDR2G can be shipped within 24 hours after order. If you have any demands for MVDF2C03HDR2G, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    MVDF2C03HDR2G Atribi pwodwi yo

    Nimewo Pati : MVDF2C03HDR2G
    Manifakti : ON Semiconductor
    Deskripsyon : MOSFET N/P-CH 30V 4.1A/3A 8SOIC
    Seri : -
    Estati Pati : Obsolete
    FET Kalite : N and P-Channel Complementary
    Karakteristik FET : Logic Level Gate
    Drenaj nan Voltage Sous (Vdss) : 30V
    Kouran - Drenaj Kontinye (Id) @ 25 ° C : 4.1A, 3A
    RD sou (Max) @ Id, Vgs : 70 mOhm @ 3A, 10V
    Vgs (th) (Max) @ Id : 3V @ 250µA
    Chaje Gate (Qg) (Max) @ Vgs : 16nC @ 10V
    Antre kapasite (Ciss) (Max) @ Vds : 630pF @ 24V
    Pouvwa - Max : 2W
    Operating Tanperati : -55°C ~ 150°C (TJ)
    Mounting Kalite : Surface Mount
    Pake / Ka : 8-SOIC (0.154", 3.90mm Width)
    Pake Aparèy Founisè : 8-SOIC

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