TK25E06K3,S1X(S Pricing (USD) [100602PC Stock]
- 1 pcs$0.42969
- 50 pcs$0.42755
- Nimewo Pati:
- TK25E06K3,S1X(S
- Manifakti:
- Toshiba Semiconductor and Storage
- Detaye deskripsyon:
- MOSFET N-CH 60V 25A TO-220AB.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - SCR - Modil yo, Transistors - IGBTs - Arrays, Transistors - Objektif espesyal, Transistors - Bipolè (BJT) - Single, Modil pouvwa chofè, Diodes - Bridge rèktifikateur, Transistors - FETs, MOSFETs - Arrays and Transistors - IGBTs - Single ...
- Avantaj konpetitif:
- We specialize in Toshiba Semiconductor and Storage TK25E06K3,S1X(S electronic components. TK25E06K3,S1X(S can be shipped within 24 hours after order. If you have any demands for TK25E06K3,S1X(S, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TK25E06K3,S1X(S Atribi pwodwi yo
Nimewo Pati :
TK25E06K3,S1X(S
Manifakti :
Toshiba Semiconductor and Storage
Deskripsyon :
MOSFET N-CH 60V 25A TO-220AB
Seri :
U-MOSIV
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
25A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
-
RD sou (Max) @ Id, Vgs :
18 mOhm @ 12.5A, 10V
Vgs (th) (Max) @ Id :
-
Chaje Gate (Qg) (Max) @ Vgs :
29nC @ 10V
Vgs (Max) :
-
Antre kapasite (Ciss) (Max) @ Vds :
-
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
60W (Tc)
Operating Tanperati :
150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-220-3
Pake / Ka :
TO-220-3
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