Nimewo Pati :
SI4413DDY-T1-GE3
Manifakti :
Vishay Siliconix
Deskripsyon :
MOSFET P-CHANNEL 8SOIC
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
-
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
-
Drive Voltage (Max Rds Sou, Min RDS Sou) :
4.5V, 10V
RD sou (Max) @ Id, Vgs :
5.5 mOhm @ 10A, 10V
Vgs (th) (Max) @ Id :
1.6V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
114nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
4780pF @ 15V
Disipasyon Pouvwa (Max) :
-
Operating Tanperati :
-55°C ~ 125°C
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
8-SOIC
Pake / Ka :
8-SOIC (0.154", 3.90mm Width)