Deskripsyon :
MOSFET N/P-CH
FET Kalite :
N and P-Channel, Common Drain
Karakteristik FET :
Standard
Drenaj nan Voltage Sous (Vdss) :
100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
54A (Tc), 62A (Tc)
RD sou (Max) @ Id, Vgs :
24 mOhm @ 38A, 10V, 11 mOhm @ 25A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA, 4.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
197nC @ 10V, 104nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
1370pF @ 25V, 5080pF @ 25V
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake / Ka :
ISOPLUSi5-Pak™
Pake Aparèy Founisè :
ISOPLUS i4-PAC™