Nexperia USA Inc. - BSP220,115

KEY Part #: K6417148

BSP220,115 Pricing (USD) [210533PC Stock]

  • 1 pcs$0.17569
  • 1,000 pcs$0.15383

Nimewo Pati:
BSP220,115
Manifakti:
Nexperia USA Inc.
Detaye deskripsyon:
MOSFET P-CH 200V 0.225A SOT223.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Pre-partial, Diodes - Rèkteur - Arrays, Modil pouvwa chofè, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - IGBTs - Modil yo, Transistors - IGBTs - Single and Transistors - Pwogramasyon Unijunction ...
Avantaj konpetitif:
We specialize in Nexperia USA Inc. BSP220,115 electronic components. BSP220,115 can be shipped within 24 hours after order. If you have any demands for BSP220,115, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BSP220,115 Atribi pwodwi yo

Nimewo Pati : BSP220,115
Manifakti : Nexperia USA Inc.
Deskripsyon : MOSFET P-CH 200V 0.225A SOT223
Seri : -
Estati Pati : Active
FET Kalite : P-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 200V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 225mA (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 12 Ohm @ 200mA, 10V
Vgs (th) (Max) @ Id : 2.8V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs : -
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 90pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 1.5W (Ta)
Operating Tanperati : 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : SC-73
Pake / Ka : TO-261-4, TO-261AA