Infineon Technologies - BSC046N02KSGAUMA1

KEY Part #: K6420109

BSC046N02KSGAUMA1 Pricing (USD) [161384PC Stock]

  • 1 pcs$0.22919

Nimewo Pati:
BSC046N02KSGAUMA1
Manifakti:
Infineon Technologies
Detaye deskripsyon:
MOSFET N-CH 20V 80A TDSON-8.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - JFETs, Diodes - Zener - Arrays, Diodes - Rèkteur - Arrays, Transistors - FETs, MOSFETs - RF, Tiristors - SCR, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Diodes - RF and Transistors - Pwogramasyon Unijunction ...
Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BSC046N02KSGAUMA1 Atribi pwodwi yo

Nimewo Pati : BSC046N02KSGAUMA1
Manifakti : Infineon Technologies
Deskripsyon : MOSFET N-CH 20V 80A TDSON-8
Seri : OptiMOS™
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 19A (Ta), 80A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 2.5V, 4.5V
RD sou (Max) @ Id, Vgs : 4.6 mOhm @ 50A, 4.5V
Vgs (th) (Max) @ Id : 1.2V @ 110µA
Chaje Gate (Qg) (Max) @ Vgs : 27.6nC @ 4.5V
Vgs (Max) : ±12V
Antre kapasite (Ciss) (Max) @ Vds : 4100pF @ 10V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 2.8W (Ta), 48W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : PG-TDSON-8
Pake / Ka : 8-PowerTDFN