Manifakti :
GeneSiC Semiconductor
Deskripsyon :
TRANS SJT 650V 4A TO276
Teknoloji :
SiC (Silicon Carbide Junction Transistor)
Drenaj nan Voltage Sous (Vdss) :
650V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
4A (Tc) (165°C)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
-
RD sou (Max) @ Id, Vgs :
415 mOhm @ 4A
Chaje Gate (Qg) (Max) @ Vgs :
-
Antre kapasite (Ciss) (Max) @ Vds :
324pF @ 35V
Disipasyon Pouvwa (Max) :
125W (Tc)
Operating Tanperati :
-55°C ~ 225°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
TO-276