Infineon Technologies - IPBH6N03LA

KEY Part #: K6409877

[130PC Stock]


    Nimewo Pati:
    IPBH6N03LA
    Manifakti:
    Infineon Technologies
    Detaye deskripsyon:
    MOSFET N-CH 25V 50A D2PAK.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - DIACs, SIDACs, Transistors - IGBTs - Modil yo, Transistors - Objektif espesyal, Transistors - Bipolè (BJT) - RF, Diodes - Rèkteur - Arrays, Diodes - Zener - Single, Transistors - Bipolè (BJT) - Single and Tiristors - TRIACs ...
    Avantaj konpetitif:
    We specialize in Infineon Technologies IPBH6N03LA electronic components. IPBH6N03LA can be shipped within 24 hours after order. If you have any demands for IPBH6N03LA, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    IPBH6N03LA Atribi pwodwi yo

    Nimewo Pati : IPBH6N03LA
    Manifakti : Infineon Technologies
    Deskripsyon : MOSFET N-CH 25V 50A D2PAK
    Seri : OptiMOS™
    Estati Pati : Obsolete
    FET Kalite : N-Channel
    Teknoloji : MOSFET (Metal Oxide)
    Drenaj nan Voltage Sous (Vdss) : 25V
    Kouran - Drenaj Kontinye (Id) @ 25 ° C : 50A (Tc)
    Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V
    RD sou (Max) @ Id, Vgs : 6.2 mOhm @ 50A, 10V
    Vgs (th) (Max) @ Id : 2V @ 30µA
    Chaje Gate (Qg) (Max) @ Vgs : 19nC @ 5V
    Vgs (Max) : ±20V
    Antre kapasite (Ciss) (Max) @ Vds : 2390pF @ 15V
    Karakteristik FET : -
    Disipasyon Pouvwa (Max) : 71W (Tc)
    Operating Tanperati : -55°C ~ 175°C (TJ)
    Mounting Kalite : Surface Mount
    Pake Aparèy Founisè : PG-TO263-3-2
    Pake / Ka : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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