PMFPB8032XP,115 Pricing (USD) [316806PC Stock]
- 1 pcs$0.11675
- 3,000 pcs$0.10093
- Nimewo Pati:
- PMFPB8032XP,115
- Manifakti:
- Nexperia USA Inc.
- Detaye deskripsyon:
- MOSFET P-CH 20V 2.7A HUSON6.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - TRIACs, Transistors - Bipolè (BJT) - Arrays, Diodes - RF, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - IGBTs - Arrays, Transistors - IGBTs - Single, Transistors - Objektif espesyal and Tiristors - SCR ...
- Avantaj konpetitif:
- We specialize in Nexperia USA Inc. PMFPB8032XP,115 electronic components. PMFPB8032XP,115 can be shipped within 24 hours after order. If you have any demands for PMFPB8032XP,115, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
PMFPB8032XP,115 Atribi pwodwi yo
Nimewo Pati :
PMFPB8032XP,115
Manifakti :
Nexperia USA Inc.
Deskripsyon :
MOSFET P-CH 20V 2.7A HUSON6
Seri :
-
Estati Pati :
Active
FET Kalite :
P-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
2.7A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
4.5V
RD sou (Max) @ Id, Vgs :
102 mOhm @ 2.7A, 4.5V
Vgs (th) (Max) @ Id :
1V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
8.6nC @ 4.5V
Vgs (Max) :
±12V
Antre kapasite (Ciss) (Max) @ Vds :
550pF @ 10V
Karakteristik FET :
Schottky Diode (Isolated)
Disipasyon Pouvwa (Max) :
485mW (Ta), 6.25W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
6-HUSON-EP (2x2)
Pake / Ka :
6-UDFN Exposed Pad
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