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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Single
  5. NVMFS4841NWFT1G

ON Semiconductor - NVMFS4841NWFT1G

KEY Part #: K6402802

NVMFS4841NWFT1G Pricing (USD) [2578PC Stock]

  • 1,500 pcs$0.21078
Nimewo Pati:
NVMFS4841NWFT1G
Manifakti:
ON Semiconductor
Detaye deskripsyon:
MOSFET N-CH 30V 89A SO8FL.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - DIACs, SIDACs, Transistors - Pwogramasyon Unijunction, Tiristors - TRIACs, Diodes - Bridge rèktifikateur, Modil pouvwa chofè, Transistors - Bipolè (BJT) - Arrays, Tiristors - SCR - Modil yo and Transistors - IGBTs - Modil yo ...
Avantaj konpetitif:
We specialize in ON Semiconductor NVMFS4841NWFT1G electronic components. NVMFS4841NWFT1G can be shipped within 24 hours after order. If you have any demands for NVMFS4841NWFT1G, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

NVMFS4841NWFT1G Atribi pwodwi yo

Nimewo Pati : NVMFS4841NWFT1G
Manifakti : ON Semiconductor
Deskripsyon : MOSFET N-CH 30V 89A SO8FL
Seri : -
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 16A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V
RD sou (Max) @ Id, Vgs : 7 mOhm @ 30A, 10V
Vgs (th) (Max) @ Id : 2.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 17nC @ 4.5V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 1436pF @ 12V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 3.7W (Ta), 112W (Tc)
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : 5-DFN (5x6) (8-SOFL)
Pake / Ka : 8-PowerTDFN

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