Diodes Incorporated - DMTH32M5LPSQ-13

KEY Part #: K6396230

DMTH32M5LPSQ-13 Pricing (USD) [156698PC Stock]

  • 1 pcs$0.23604

Nimewo Pati:
DMTH32M5LPSQ-13
Manifakti:
Diodes Incorporated
Detaye deskripsyon:
MOSFET BVDSS 25V-30V POWERDI506.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - DIACs, SIDACs, Modil pouvwa chofè, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - Objektif espesyal, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Diodes - Rèkteur - Arrays, Tiristors - SCR - Modil yo and Transistors - Pwogramasyon Unijunction ...
Avantaj konpetitif:
We specialize in Diodes Incorporated DMTH32M5LPSQ-13 electronic components. DMTH32M5LPSQ-13 can be shipped within 24 hours after order. If you have any demands for DMTH32M5LPSQ-13, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

DMTH32M5LPSQ-13 Atribi pwodwi yo

Nimewo Pati : DMTH32M5LPSQ-13
Manifakti : Diodes Incorporated
Deskripsyon : MOSFET BVDSS 25V-30V POWERDI506
Seri : Automotive, AEC-Q101
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 170A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V
RD sou (Max) @ Id, Vgs : 2.2 mOhm @ 30A, 10V
Vgs (th) (Max) @ Id : 3V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs : 68nC @ 10V
Vgs (Max) : ±16V
Antre kapasite (Ciss) (Max) @ Vds : 3944pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 3.2W (Ta), 100W (Tc)
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : PowerDI5060-8
Pake / Ka : 8-PowerTDFN