Vishay Siliconix - SI1303DL-T1-E3

KEY Part #: K6413264

[13160PC Stock]


    Nimewo Pati:
    SI1303DL-T1-E3
    Manifakti:
    Vishay Siliconix
    Detaye deskripsyon:
    MOSFET P-CH 20V 670MA SOT323-3.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - RF, Transistors - Bipolè (BJT) - Single, Diodes - Bridge rèktifikateur, Diodes - Rèkteur - Single, Transistors - JFETs, Transistors - IGBTs - Arrays, Transistors - FETs, MOSFETs - Arrays and Transistors - Objektif espesyal ...
    Avantaj konpetitif:
    We specialize in Vishay Siliconix SI1303DL-T1-E3 electronic components. SI1303DL-T1-E3 can be shipped within 24 hours after order. If you have any demands for SI1303DL-T1-E3, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    SI1303DL-T1-E3 Atribi pwodwi yo

    Nimewo Pati : SI1303DL-T1-E3
    Manifakti : Vishay Siliconix
    Deskripsyon : MOSFET P-CH 20V 670MA SOT323-3
    Seri : TrenchFET®
    Estati Pati : Obsolete
    FET Kalite : P-Channel
    Teknoloji : MOSFET (Metal Oxide)
    Drenaj nan Voltage Sous (Vdss) : 20V
    Kouran - Drenaj Kontinye (Id) @ 25 ° C : 670mA (Ta)
    Drive Voltage (Max Rds Sou, Min RDS Sou) : 2.5V, 4.5V
    RD sou (Max) @ Id, Vgs : 430 mOhm @ 1A, 4.5V
    Vgs (th) (Max) @ Id : 1.4V @ 250µA
    Chaje Gate (Qg) (Max) @ Vgs : 2.2nC @ 4.5V
    Vgs (Max) : ±12V
    Antre kapasite (Ciss) (Max) @ Vds : -
    Karakteristik FET : -
    Disipasyon Pouvwa (Max) : 290mW (Ta)
    Operating Tanperati : -55°C ~ 150°C (TJ)
    Mounting Kalite : Surface Mount
    Pake Aparèy Founisè : SC-70-3
    Pake / Ka : SC-70, SOT-323

    Ou ka enterese tou