IXFH220N06T3 Pricing (USD) [19897PC Stock]
- 1 pcs$2.27842
- 10 pcs$2.03603
- 100 pcs$1.66955
- 500 pcs$1.35193
- 1,000 pcs$1.08171
- Nimewo Pati:
- IXFH220N06T3
- Manifakti:
- IXYS
- Detaye deskripsyon:
- 60V/220A TRENCHT3 HIPERFET MOSFE.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Pre-partial, Diodes - Rèkteur - Single, Transistors - IGBTs - Single, Tiristors - SCR, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - FETs, MOSFETs - RF, Modil pouvwa chofè and Transistors - IGBTs - Arrays ...
- Avantaj konpetitif:
- We specialize in IXYS IXFH220N06T3 electronic components. IXFH220N06T3 can be shipped within 24 hours after order. If you have any demands for IXFH220N06T3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXFH220N06T3 Atribi pwodwi yo
Nimewo Pati :
IXFH220N06T3
Manifakti :
IXYS
Deskripsyon :
60V/220A TRENCHT3 HIPERFET MOSFE
Seri :
HiperFET™, TrenchT3™
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
220A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
4 mOhm @ 100A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
136nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
8500pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
440W (Tc)
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-247
Pake / Ka :
TO-247-3
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