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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Single
  5. FCPF380N65FL1

ON Semiconductor - FCPF380N65FL1

KEY Part #: K6418313

FCPF380N65FL1 Pricing (USD) [59346PC Stock]

  • 1 pcs$0.66216
  • 1,000 pcs$0.65887
Nimewo Pati:
FCPF380N65FL1
Manifakti:
ON Semiconductor
Detaye deskripsyon:
MOSFET N-CH 650V 10.2A TO220.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Arrays, Transistors - Bipolè (BJT) - Single, Tiristors - SCR - Modil yo, Tiristors - SCR, Diodes - Zener - Single, Tiristors - TRIACs, Transistors - FETs, MOSFETs - Single and Diodes - Bridge rèktifikateur ...
Avantaj konpetitif:
We specialize in ON Semiconductor FCPF380N65FL1 electronic components. FCPF380N65FL1 can be shipped within 24 hours after order. If you have any demands for FCPF380N65FL1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FCPF380N65FL1 Atribi pwodwi yo

Nimewo Pati : FCPF380N65FL1
Manifakti : ON Semiconductor
Deskripsyon : MOSFET N-CH 650V 10.2A TO220
Seri : FRFET®, SuperFET® II
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 650V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 10.2A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 380 mOhm @ 5.1A, 10V
Vgs (th) (Max) @ Id : 5V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs : 43nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 1680pF @ 100V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 33W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : TO-220F
Pake / Ka : TO-220-3 Full Pack

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