DMN2015UFDE-7 Pricing (USD) [434437PC Stock]
- 1 pcs$0.08514
- 3,000 pcs$0.04424
- Nimewo Pati:
- DMN2015UFDE-7
- Manifakti:
- Diodes Incorporated
- Detaye deskripsyon:
- MOSFET N-CH 20V 10.5A U-DFN.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Zener - Single, Transistors - Objektif espesyal, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - IGBTs - Modil yo, Diodes - Rèkteur - Single, Transistors - Bipolè (BJT) - RF, Transistors - Bipolè (BJT) - Single and Diodes - RF ...
- Avantaj konpetitif:
- We specialize in Diodes Incorporated DMN2015UFDE-7 electronic components. DMN2015UFDE-7 can be shipped within 24 hours after order. If you have any demands for DMN2015UFDE-7, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DMN2015UFDE-7 Atribi pwodwi yo
Nimewo Pati :
DMN2015UFDE-7
Manifakti :
Diodes Incorporated
Deskripsyon :
MOSFET N-CH 20V 10.5A U-DFN
Seri :
-
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
10.5A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
1.5V, 4.5V
RD sou (Max) @ Id, Vgs :
11.6 mOhm @ 8.5A, 4.5V
Vgs (th) (Max) @ Id :
1.1V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
45.6nC @ 10V
Vgs (Max) :
±12V
Antre kapasite (Ciss) (Max) @ Vds :
1779pF @ 10V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
660mW (Ta)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
U-DFN2020-6 (Type E)
Pake / Ka :
6-PowerUDFN
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