IRL60B216 Pricing (USD) [21302PC Stock]
- 1 pcs$1.85535
- 10 pcs$1.65659
- 100 pcs$1.35828
- 500 pcs$1.04349
- 1,000 pcs$0.88005
- Nimewo Pati:
- IRL60B216
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- MOSFET N-CH 60V 195A.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Zener - Single, Transistors - IGBTs - Arrays, Transistors - JFETs, Tiristors - TRIACs, Transistors - FETs, MOSFETs - RF, Transistors - Bipolè (BJT) - RF, Tiristors - SCR - Modil yo and Transistors - FETs, MOSFETs - Single ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies IRL60B216 electronic components. IRL60B216 can be shipped within 24 hours after order. If you have any demands for IRL60B216, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRL60B216 Atribi pwodwi yo
Nimewo Pati :
IRL60B216
Manifakti :
Infineon Technologies
Deskripsyon :
MOSFET N-CH 60V 195A
Seri :
HEXFET®, StrongIRFET™
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
195A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
4.5V, 10V
RD sou (Max) @ Id, Vgs :
1.9 mOhm @ 100A, 10V
Vgs (th) (Max) @ Id :
2.4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
258nC @ 4.5V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
15570pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
375W (Tc)
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-220AB
Pake / Ka :
TO-220-3
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