ON Semiconductor - FDMB3800N

KEY Part #: K6524933

FDMB3800N Pricing (USD) [244308PC Stock]

  • 1 pcs$0.15215
  • 3,000 pcs$0.15140

Nimewo Pati:
FDMB3800N
Manifakti:
ON Semiconductor
Detaye deskripsyon:
MOSFET 2N-CH 30V 4.8A MICROFET.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Modil pouvwa chofè, Diodes - RF, Transistors - IGBTs - Arrays, Transistors - FETs, MOSFETs - RF, Transistors - FETs, MOSFETs - Arrays, Diodes - Varyab kapasite (Varicaps, Varactors), Diodes - Zener - Arrays and Tiristors - SCR ...
Avantaj konpetitif:
We specialize in ON Semiconductor FDMB3800N electronic components. FDMB3800N can be shipped within 24 hours after order. If you have any demands for FDMB3800N, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FDMB3800N Atribi pwodwi yo

Nimewo Pati : FDMB3800N
Manifakti : ON Semiconductor
Deskripsyon : MOSFET 2N-CH 30V 4.8A MICROFET
Seri : PowerTrench®
Estati Pati : Active
FET Kalite : 2 N-Channel (Dual)
Karakteristik FET : Logic Level Gate
Drenaj nan Voltage Sous (Vdss) : 30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 4.8A
RD sou (Max) @ Id, Vgs : 40 mOhm @ 4.8A, 10V
Vgs (th) (Max) @ Id : 3V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 5.6nC @ 5V
Antre kapasite (Ciss) (Max) @ Vds : 465pF @ 15V
Pouvwa - Max : 750mW
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake / Ka : 8-PowerWDFN
Pake Aparèy Founisè : 8-MLP, MicroFET (3x1.9)