IXFE48N50QD3 Pricing (USD) [2840PC Stock]
- 1 pcs$16.09962
- 10 pcs$16.01952
- Nimewo Pati:
- IXFE48N50QD3
- Manifakti:
- IXYS
- Detaye deskripsyon:
- MOSFET N-CH 500V 41A SOT-227B.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Pre-partial, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Diodes - RF, Transistors - Bipolè (BJT) - Single, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - IGBTs - Single, Transistors - Bipolè (BJT) - RF and Transistors - FETs, MOSFETs - Single ...
- Avantaj konpetitif:
- We specialize in IXYS IXFE48N50QD3 electronic components. IXFE48N50QD3 can be shipped within 24 hours after order. If you have any demands for IXFE48N50QD3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXFE48N50QD3 Atribi pwodwi yo
Nimewo Pati :
IXFE48N50QD3
Manifakti :
IXYS
Deskripsyon :
MOSFET N-CH 500V 41A SOT-227B
Seri :
HiPerFET™
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
500V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
41A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
110 mOhm @ 24A, 10V
Vgs (th) (Max) @ Id :
4V @ 4mA
Chaje Gate (Qg) (Max) @ Vgs :
190nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
8000pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
400W (Tc)
Operating Tanperati :
-40°C ~ 150°C (TJ)
Mounting Kalite :
Chassis Mount
Pake Aparèy Founisè :
SOT-227B
Pake / Ka :
SOT-227-4, miniBLOC
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