Toshiba Semiconductor and Storage - TPC8221-H,LQ(S

KEY Part #: K6523932

[4000PC Stock]


    Nimewo Pati:
    TPC8221-H,LQ(S
    Manifakti:
    Toshiba Semiconductor and Storage
    Detaye deskripsyon:
    MOSFET 2N-CH 30V 6A 8SOP.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - RF, Transistors - IGBTs - Arrays, Tiristors - DIACs, SIDACs, Diodes - Zener - Arrays, Transistors - FETs, MOSFETs - Single, Transistors - FETs, MOSFETs - Arrays, Diodes - Rèkteur - Single and Transistors - Bipolè (BJT) - Arrays, Pre-partial ...
    Avantaj konpetitif:
    We specialize in Toshiba Semiconductor and Storage TPC8221-H,LQ(S electronic components. TPC8221-H,LQ(S can be shipped within 24 hours after order. If you have any demands for TPC8221-H,LQ(S, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    TPC8221-H,LQ(S Atribi pwodwi yo

    Nimewo Pati : TPC8221-H,LQ(S
    Manifakti : Toshiba Semiconductor and Storage
    Deskripsyon : MOSFET 2N-CH 30V 6A 8SOP
    Seri : -
    Estati Pati : Obsolete
    FET Kalite : 2 N-Channel (Dual)
    Karakteristik FET : Standard
    Drenaj nan Voltage Sous (Vdss) : 30V
    Kouran - Drenaj Kontinye (Id) @ 25 ° C : 6A
    RD sou (Max) @ Id, Vgs : 25 mOhm @ 3A, 10V
    Vgs (th) (Max) @ Id : 2.3V @ 100µA
    Chaje Gate (Qg) (Max) @ Vgs : 12nC @ 10V
    Antre kapasite (Ciss) (Max) @ Vds : 830pF @ 10V
    Pouvwa - Max : 450mW
    Operating Tanperati : 150°C (TJ)
    Mounting Kalite : Surface Mount
    Pake / Ka : 8-SOIC (0.154", 3.90mm Width)
    Pake Aparèy Founisè : 8-SOP