Microsemi Corporation - APTC60DDAM70T1G

KEY Part #: K6522615

APTC60DDAM70T1G Pricing (USD) [2703PC Stock]

  • 1 pcs$16.01999
  • 100 pcs$15.61594

Nimewo Pati:
APTC60DDAM70T1G
Manifakti:
Microsemi Corporation
Detaye deskripsyon:
MOSFET 2N-CH 600V 39A SP1.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Arrays, Transistors - FETs, MOSFETs - Arrays, Tiristors - SCR, Tiristors - TRIACs, Modil pouvwa chofè, Diodes - Rèkteur - Arrays, Transistors - Bipolè (BJT) - Arrays, Pre-partial and Tiristors - DIACs, SIDACs ...
Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

APTC60DDAM70T1G Atribi pwodwi yo

Nimewo Pati : APTC60DDAM70T1G
Manifakti : Microsemi Corporation
Deskripsyon : MOSFET 2N-CH 600V 39A SP1
Seri : CoolMOS™
Estati Pati : Active
FET Kalite : 2 N Channel (Dual Buck Chopper)
Karakteristik FET : Logic Level Gate
Drenaj nan Voltage Sous (Vdss) : 600V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 39A
RD sou (Max) @ Id, Vgs : 70 mOhm @ 39A, 10V
Vgs (th) (Max) @ Id : 3.9V @ 2.7mA
Chaje Gate (Qg) (Max) @ Vgs : 259nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds : 7000pF @ 25V
Pouvwa - Max : 250W
Operating Tanperati : -40°C ~ 150°C (TJ)
Mounting Kalite : Chassis Mount
Pake / Ka : SP1
Pake Aparèy Founisè : SP1