IXFH80N65X2-4 Pricing (USD) [9197PC Stock]
- 1 pcs$4.48104
- Nimewo Pati:
- IXFH80N65X2-4
- Manifakti:
- IXYS
- Detaye deskripsyon:
- MOSFET N-CH.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Pwogramasyon Unijunction, Transistors - IGBTs - Modil yo, Transistors - FETs, MOSFETs - Single, Transistors - FETs, MOSFETs - RF, Diodes - Rèkteur - Arrays, Transistors - JFETs, Modil pouvwa chofè and Transistors - Objektif espesyal ...
- Avantaj konpetitif:
- We specialize in IXYS IXFH80N65X2-4 electronic components. IXFH80N65X2-4 can be shipped within 24 hours after order. If you have any demands for IXFH80N65X2-4, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXFH80N65X2-4 Atribi pwodwi yo
Nimewo Pati :
IXFH80N65X2-4
Manifakti :
IXYS
Deskripsyon :
MOSFET N-CH
Seri :
HiPerFET™
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
650V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
80A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
38 mOhm @ 500mA, 10V
Vgs (th) (Max) @ Id :
5V @ 4mA
Chaje Gate (Qg) (Max) @ Vgs :
140nC @ 10V
Vgs (Max) :
±30V
Antre kapasite (Ciss) (Max) @ Vds :
8300pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
890W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-247-4L
Pake / Ka :
TO-247-4
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