C3M0120090D Pricing (USD) [13854PC Stock]
- 1 pcs$2.97472
- Nimewo Pati:
- C3M0120090D
- Manifakti:
- Cree/Wolfspeed
- Detaye deskripsyon:
- 900V 120 MOHM G3 SIC MOSFET.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Tiristors - SCR - Modil yo, Diodes - Zener - Single, Tiristors - DIACs, SIDACs, Transistors - FETs, MOSFETs - Single, Diodes - RF, Diodes - Zener - Arrays and Diodes - Varyab kapasite (Varicaps, Varactors) ...
- Avantaj konpetitif:
- We specialize in Cree/Wolfspeed C3M0120090D electronic components. C3M0120090D can be shipped within 24 hours after order. If you have any demands for C3M0120090D, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
C3M0120090D Atribi pwodwi yo
Nimewo Pati :
C3M0120090D
Manifakti :
Cree/Wolfspeed
Deskripsyon :
900V 120 MOHM G3 SIC MOSFET
Seri :
C3M™
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
SiCFET (Silicon Carbide)
Drenaj nan Voltage Sous (Vdss) :
900V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
23A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
15V
RD sou (Max) @ Id, Vgs :
155 mOhm @ 15A, 15V
Vgs (th) (Max) @ Id :
3.5V @ 3mA
Chaje Gate (Qg) (Max) @ Vgs :
17.3nC @ 15V
Vgs (Max) :
+18V, -8V
Antre kapasite (Ciss) (Max) @ Vds :
350pF @ 600V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
97W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-247-3
Pake / Ka :
TO-247-3
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