DMT6012LFDF-7 Pricing (USD) [341867PC Stock]
- 1 pcs$0.10819
- Nimewo Pati:
- DMT6012LFDF-7
- Manifakti:
- Diodes Incorporated
- Detaye deskripsyon:
- MOSFET BVDSS 41V-60V U-DFN2020-.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - Single, Tiristors - DIACs, SIDACs, Transistors - Objektif espesyal, Transistors - IGBTs - Single, Transistors - JFETs, Diodes - Rèkteur - Arrays, Diodes - Zener - Arrays and Tiristors - SCR - Modil yo ...
- Avantaj konpetitif:
- We specialize in Diodes Incorporated DMT6012LFDF-7 electronic components. DMT6012LFDF-7 can be shipped within 24 hours after order. If you have any demands for DMT6012LFDF-7, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DMT6012LFDF-7 Atribi pwodwi yo
Nimewo Pati :
DMT6012LFDF-7
Manifakti :
Diodes Incorporated
Deskripsyon :
MOSFET BVDSS 41V-60V U-DFN2020-
Seri :
-
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
9.5A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
4.5V, 10V
RD sou (Max) @ Id, Vgs :
14 mOhm @ 8.5A, 10V
Vgs (th) (Max) @ Id :
2.3V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
13.6nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
785pF @ 30V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
900mW (Ta), 11W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
U-DFN2020-6
Pake / Ka :
6-UDFN Exposed Pad
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