[3538PC Stock]
- Nimewo Pati:
- BUK9E3R7-60E,127
- Manifakti:
- NXP USA Inc.
- Detaye deskripsyon:
- MOSFET N-CH 60V 120A I2PAK.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - RF, Tiristors - SCR - Modil yo, Transistors - IGBTs - Arrays, Transistors - Bipolè (BJT) - Arrays, Transistors - IGBTs - Modil yo, Tiristors - SCR, Modil pouvwa chofè and Diodes - Zener - Single ...
- Avantaj konpetitif:
- We specialize in NXP USA Inc. BUK9E3R7-60E,127 electronic components. BUK9E3R7-60E,127 can be shipped within 24 hours after order. If you have any demands for BUK9E3R7-60E,127, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BUK9E3R7-60E,127 Atribi pwodwi yo
Nimewo Pati :
BUK9E3R7-60E,127
Manifakti :
NXP USA Inc.
Deskripsyon :
MOSFET N-CH 60V 120A I2PAK
Seri :
TrenchMOS™
Estati Pati :
Obsolete
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
120A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
5V, 10V
RD sou (Max) @ Id, Vgs :
3.4 mOhm @ 25A, 10V
Vgs (th) (Max) @ Id :
2.1V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs :
95nC @ 5V
Vgs (Max) :
±10V
Antre kapasite (Ciss) (Max) @ Vds :
13490pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
293W (Tc)
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
I2PAK
Pake / Ka :
TO-262-3 Long Leads, I²Pak, TO-262AA
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