Nimewo Pati :
TPH6R30ANL,L1Q
Manifakti :
Toshiba Semiconductor and Storage
Deskripsyon :
X35 PB-F POWER MOSFET TRANSISTOR
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
66A (Ta), 45A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
4.5V, 10V
RD sou (Max) @ Id, Vgs :
6.3 mOhm @ 22.5A, 10V
Vgs (th) (Max) @ Id :
2.5V @ 500µA
Chaje Gate (Qg) (Max) @ Vgs :
55nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
4300pF @ 50V
Disipasyon Pouvwa (Max) :
2.5W (Ta), 54W (Tc)
Operating Tanperati :
150°C
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
8-SOP Advance (5x5)