[637PC Stock]
- Nimewo Pati:
- RDX120N50FU6
- Manifakti:
- Rohm Semiconductor
- Detaye deskripsyon:
- MOSFET N-CH 500V 12A TO-220FM.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Zener - Arrays, Tiristors - SCR - Modil yo, Transistors - FETs, MOSFETs - Arrays, Transistors - IGBTs - Single, Diodes - Rèkteur - Arrays, Transistors - Bipolè (BJT) - Single, Transistors - IGBTs - Arrays and Transistors - Bipolè (BJT) - Arrays ...
- Avantaj konpetitif:
- We specialize in Rohm Semiconductor RDX120N50FU6 electronic components. RDX120N50FU6 can be shipped within 24 hours after order. If you have any demands for RDX120N50FU6, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
RDX120N50FU6 Atribi pwodwi yo
Nimewo Pati :
RDX120N50FU6
Manifakti :
Rohm Semiconductor
Deskripsyon :
MOSFET N-CH 500V 12A TO-220FM
Seri :
-
Estati Pati :
Obsolete
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
500V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
12A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
500 mOhm @ 6A, 10V
Vgs (th) (Max) @ Id :
4V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs :
45nC @ 10V
Vgs (Max) :
±30V
Antre kapasite (Ciss) (Max) @ Vds :
1600pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
45W (Tc)
Operating Tanperati :
150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-220FM
Pake / Ka :
TO-220-3 Full Pack
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