Diodes Incorporated - DMN2025UFDF-13

KEY Part #: K6416444

DMN2025UFDF-13 Pricing (USD) [795452PC Stock]

  • 1 pcs$0.04650

Nimewo Pati:
DMN2025UFDF-13
Manifakti:
Diodes Incorporated
Detaye deskripsyon:
MOSFET BVDSS 8V-24V U-DFN2020-6.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Pre-partial, Diodes - Zener - Single, Diodes - Rèkteur - Arrays, Transistors - JFETs, Tiristors - DIACs, SIDACs, Transistors - Bipolè (BJT) - Single, Tiristors - SCR - Modil yo and Transistors - Bipolè (BJT) - Arrays ...
Avantaj konpetitif:
We specialize in Diodes Incorporated DMN2025UFDF-13 electronic components. DMN2025UFDF-13 can be shipped within 24 hours after order. If you have any demands for DMN2025UFDF-13, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

DMN2025UFDF-13 Atribi pwodwi yo

Nimewo Pati : DMN2025UFDF-13
Manifakti : Diodes Incorporated
Deskripsyon : MOSFET BVDSS 8V-24V U-DFN2020-6
Seri : -
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 6.5A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 1.8V, 4.5V
RD sou (Max) @ Id, Vgs : 25 mOhm @ 4A, 4.5V
Vgs (th) (Max) @ Id : 1V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 12.3nC @ 10V
Vgs (Max) : ±10V
Antre kapasite (Ciss) (Max) @ Vds : 486pF @ 10V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 700mW (Ta)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : U-DFN2020-6
Pake / Ka : 6-UDFN Exposed Pad