IXYS - IXFQ23N60Q

KEY Part #: K6411986

IXFQ23N60Q Pricing (USD) [8619PC Stock]

  • 1 pcs$5.26196

Nimewo Pati:
IXFQ23N60Q
Manifakti:
IXYS
Detaye deskripsyon:
MOSFET N-CH 600V 23A TO-268D3.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - SCR - Modil yo, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - Objektif espesyal, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - Bipolè (BJT) - Arrays, Diodes - Zener - Arrays, Tiristors - TRIACs and Transistors - FETs, MOSFETs - Single ...
Avantaj konpetitif:
We specialize in IXYS IXFQ23N60Q electronic components. IXFQ23N60Q can be shipped within 24 hours after order. If you have any demands for IXFQ23N60Q, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IXFQ23N60Q Atribi pwodwi yo

Nimewo Pati : IXFQ23N60Q
Manifakti : IXYS
Deskripsyon : MOSFET N-CH 600V 23A TO-268D3
Seri : -
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 600V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 23A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : -
RD sou (Max) @ Id, Vgs : -
Vgs (th) (Max) @ Id : -
Chaje Gate (Qg) (Max) @ Vgs : -
Vgs (Max) : -
Antre kapasite (Ciss) (Max) @ Vds : -
Karakteristik FET : -
Disipasyon Pouvwa (Max) : -
Operating Tanperati : -
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : TO-268
Pake / Ka : TO-268-3, D³Pak (2 Leads + Tab), TO-268AA