Nexperia USA Inc. - BST82,235

KEY Part #: K6421565

BST82,235 Pricing (USD) [831966PC Stock]

  • 1 pcs$0.04446
  • 20,000 pcs$0.03877

Nimewo Pati:
BST82,235
Manifakti:
Nexperia USA Inc.
Detaye deskripsyon:
MOSFET N-CH 100V 190MA SOT-23.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - JFETs, Diodes - Zener - Arrays, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - Pwogramasyon Unijunction, Tiristors - TRIACs, Tiristors - SCR - Modil yo, Tiristors - SCR and Tiristors - DIACs, SIDACs ...
Avantaj konpetitif:
We specialize in Nexperia USA Inc. BST82,235 electronic components. BST82,235 can be shipped within 24 hours after order. If you have any demands for BST82,235, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BST82,235 Atribi pwodwi yo

Nimewo Pati : BST82,235
Manifakti : Nexperia USA Inc.
Deskripsyon : MOSFET N-CH 100V 190MA SOT-23
Seri : TrenchMOS™
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 190mA (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 5V
RD sou (Max) @ Id, Vgs : 10 Ohm @ 150mA, 5V
Vgs (th) (Max) @ Id : 2V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs : -
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 40pF @ 10V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 830mW (Tc)
Operating Tanperati : 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : TO-236AB
Pake / Ka : TO-236-3, SC-59, SOT-23-3