Vishay Siliconix - SIHG47N60EF-GE3

KEY Part #: K6411261

SIHG47N60EF-GE3 Pricing (USD) [8238PC Stock]

  • 1 pcs$4.82566
  • 10 pcs$4.34134
  • 100 pcs$3.56936
  • 500 pcs$2.99055

Nimewo Pati:
SIHG47N60EF-GE3
Manifakti:
Vishay Siliconix
Detaye deskripsyon:
MOSFET N-CH 600V 47A TO247AC.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Objektif espesyal, Tiristors - SCR - Modil yo, Transistors - Pwogramasyon Unijunction, Transistors - FETs, MOSFETs - Arrays, Transistors - JFETs, Diodes - Zener - Arrays, Transistors - FETs, MOSFETs - RF and Transistors - IGBTs - Arrays ...
Avantaj konpetitif:
We specialize in Vishay Siliconix SIHG47N60EF-GE3 electronic components. SIHG47N60EF-GE3 can be shipped within 24 hours after order. If you have any demands for SIHG47N60EF-GE3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SIHG47N60EF-GE3 Atribi pwodwi yo

Nimewo Pati : SIHG47N60EF-GE3
Manifakti : Vishay Siliconix
Deskripsyon : MOSFET N-CH 600V 47A TO247AC
Seri : -
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 600V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 47A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 67 mOhm @ 24A, 10V
Vgs (th) (Max) @ Id : 4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 225nC @ 10V
Vgs (Max) : ±30V
Antre kapasite (Ciss) (Max) @ Vds : 4854pF @ 100V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 379W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : TO-247AC
Pake / Ka : TO-247-3

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