IXTU01N80 Pricing (USD) [56679PC Stock]
- 1 pcs$0.76265
- 50 pcs$0.75885
- Nimewo Pati:
- IXTU01N80
- Manifakti:
- IXYS
- Detaye deskripsyon:
- MOSFET N-CH 800V 0.1A TO-251.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tranzistò - Bipolè (BJT) - Single, Pre-partial, Diodes - Rèkteur - Single, Transistors - FETs, MOSFETs - Arrays, Tiristors - SCR - Modil yo, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - FETs, MOSFETs - RF, Transistors - IGBTs - Single and Transistors - IGBTs - Modil yo ...
- Avantaj konpetitif:
- We specialize in IXYS IXTU01N80 electronic components. IXTU01N80 can be shipped within 24 hours after order. If you have any demands for IXTU01N80, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXTU01N80 Atribi pwodwi yo
Nimewo Pati :
IXTU01N80
Manifakti :
IXYS
Deskripsyon :
MOSFET N-CH 800V 0.1A TO-251
Seri :
-
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
800V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
100mA (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
50 Ohm @ 100mA, 10V
Vgs (th) (Max) @ Id :
4.5V @ 25µA
Chaje Gate (Qg) (Max) @ Vgs :
8nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
60pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
25W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-251
Pake / Ka :
TO-251-3 Short Leads, IPak, TO-251AA
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