Nimewo Pati :
SSM6L61NU,LF
Manifakti :
Toshiba Semiconductor and Storage
Deskripsyon :
MOSFET N/P-CH 20V 4A UDFN6
FET Kalite :
N and P-Channel
Karakteristik FET :
Standard
Drenaj nan Voltage Sous (Vdss) :
20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
4A
RD sou (Max) @ Id, Vgs :
-
Chaje Gate (Qg) (Max) @ Vgs :
-
Antre kapasite (Ciss) (Max) @ Vds :
-
Mounting Kalite :
Surface Mount
Pake / Ka :
6-WDFN Exposed Pad
Pake Aparèy Founisè :
6-UDFN (2x2)