Vishay Siliconix - SQJA64EP-T1_GE3

KEY Part #: K6420929

SQJA64EP-T1_GE3 Pricing (USD) [295523PC Stock]

  • 1 pcs$0.12516

Nimewo Pati:
SQJA64EP-T1_GE3
Manifakti:
Vishay Siliconix
Detaye deskripsyon:
MOSFET N-CH 60V 15A POWERPAKSOL.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Zener - Arrays, Tiristors - SCR - Modil yo, Diodes - Zener - Single, Diodes - Rèkteur - Single, Diodes - Bridge rèktifikateur, Transistors - Bipolè (BJT) - Single, Transistors - FETs, MOSFETs - RF and Transistors - Objektif espesyal ...
Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SQJA64EP-T1_GE3 Atribi pwodwi yo

Nimewo Pati : SQJA64EP-T1_GE3
Manifakti : Vishay Siliconix
Deskripsyon : MOSFET N-CH 60V 15A POWERPAKSOL
Seri : Automotive, AEC-Q101, TrenchFET®
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 15A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 32 mOhm @ 4A, 10V
Vgs (th) (Max) @ Id : 3.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 12nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 670pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 45W (Tc)
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : PowerPAK® SO-8
Pake / Ka : PowerPAK® SO-8