FDV302P Pricing (USD) [1303251PC Stock]
- 1 pcs$0.02838
- 3,000 pcs$0.02762
- Nimewo Pati:
- FDV302P
- Manifakti:
- ON Semiconductor
- Detaye deskripsyon:
- MOSFET P-CH 25V 120MA SOT-23.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Rèkteur - Single, Transistors - JFETs, Transistors - Bipolè (BJT) - RF, Transistors - IGBTs - Arrays, Diodes - Rèkteur - Arrays, Transistors - Objektif espesyal, Tiristors - TRIACs and Diodes - Bridge rèktifikateur ...
- Avantaj konpetitif:
- We specialize in ON Semiconductor FDV302P electronic components. FDV302P can be shipped within 24 hours after order. If you have any demands for FDV302P, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
FDV302P Atribi pwodwi yo
Nimewo Pati :
FDV302P
Manifakti :
ON Semiconductor
Deskripsyon :
MOSFET P-CH 25V 120MA SOT-23
Seri :
-
Estati Pati :
Active
FET Kalite :
P-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
25V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
120mA (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
2.7V, 4.5V
RD sou (Max) @ Id, Vgs :
10 Ohm @ 200mA, 4.5V
Vgs (th) (Max) @ Id :
1.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
0.31nC @ 4.5V
Vgs (Max) :
±8V
Antre kapasite (Ciss) (Max) @ Vds :
11pF @ 10V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
350mW (Ta)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
SOT-23
Pake / Ka :
TO-236-3, SC-59, SOT-23-3
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