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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Single
  5. APTM50SKM19G

Microsemi Corporation - APTM50SKM19G

KEY Part #: K6396597

APTM50SKM19G Pricing (USD) [870PC Stock]

  • 1 pcs$53.63340
  • 100 pcs$53.36656
Nimewo Pati:
APTM50SKM19G
Manifakti:
Microsemi Corporation
Detaye deskripsyon:
MOSFET N-CH 500V 163A SP6.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - Arrays, Diodes - Bridge rèktifikateur, Transistors - FETs, MOSFETs - Single, Transistors - JFETs, Tiristors - TRIACs, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - IGBTs - Modil yo and Diodes - RF ...
Avantaj konpetitif:
We specialize in Microsemi Corporation APTM50SKM19G electronic components. APTM50SKM19G can be shipped within 24 hours after order. If you have any demands for APTM50SKM19G, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

APTM50SKM19G Atribi pwodwi yo

Nimewo Pati : APTM50SKM19G
Manifakti : Microsemi Corporation
Deskripsyon : MOSFET N-CH 500V 163A SP6
Seri : -
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 500V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 163A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 22.5 mOhm @ 81.5A, 10V
Vgs (th) (Max) @ Id : 5V @ 10mA
Chaje Gate (Qg) (Max) @ Vgs : 492nC @ 10V
Vgs (Max) : ±30V
Antre kapasite (Ciss) (Max) @ Vds : 22400pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 1136W (Tc)
Operating Tanperati : -40°C ~ 150°C (TJ)
Mounting Kalite : Chassis Mount
Pake Aparèy Founisè : SP6
Pake / Ka : SP6

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