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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Single
  5. APT10M11B2VFRG

Microsemi Corporation - APT10M11B2VFRG

KEY Part #: K6409002

[7956PC Stock]

    Nimewo Pati:
    APT10M11B2VFRG
    Manifakti:
    Microsemi Corporation
    Detaye deskripsyon:
    MOSFET N-CH 100V 100A T-MAX.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Rèkteur - Single, Diodes - Varyab kapasite (Varicaps, Varactors), Diodes - Rèkteur - Arrays, Transistors - IGBTs - Arrays, Transistors - FETs, MOSFETs - Single, Tiristors - DIACs, SIDACs, Tiristors - SCR and Transistors - Bipolè (BJT) - Single ...
    Avantaj konpetitif:
    We specialize in Microsemi Corporation APT10M11B2VFRG electronic components. APT10M11B2VFRG can be shipped within 24 hours after order. If you have any demands for APT10M11B2VFRG, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    APT10M11B2VFRG Atribi pwodwi yo

    Nimewo Pati : APT10M11B2VFRG
    Manifakti : Microsemi Corporation
    Deskripsyon : MOSFET N-CH 100V 100A T-MAX
    Seri : POWER MOS V®
    Estati Pati : Obsolete
    FET Kalite : N-Channel
    Teknoloji : MOSFET (Metal Oxide)
    Drenaj nan Voltage Sous (Vdss) : 100V
    Kouran - Drenaj Kontinye (Id) @ 25 ° C : 100A (Tc)
    Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
    RD sou (Max) @ Id, Vgs : 11 mOhm @ 500mA, 10V
    Vgs (th) (Max) @ Id : 4V @ 2.5mA
    Chaje Gate (Qg) (Max) @ Vgs : 450nC @ 10V
    Vgs (Max) : ±30V
    Antre kapasite (Ciss) (Max) @ Vds : 10300pF @ 25V
    Karakteristik FET : -
    Disipasyon Pouvwa (Max) : 520W (Tc)
    Operating Tanperati : -55°C ~ 150°C (TJ)
    Mounting Kalite : Through Hole
    Pake Aparèy Founisè : T-MAX™
    Pake / Ka : TO-247-3 Variant

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