[12778PC Stock]
- Nimewo Pati:
- IRFBE20STRL
- Manifakti:
- Vishay Siliconix
- Detaye deskripsyon:
- MOSFET N-CH 800V 1.8A D2PAK.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Modil pouvwa chofè, Transistors - Pwogramasyon Unijunction, Transistors - FETs, MOSFETs - Arrays, Transistors - IGBTs - Arrays, Tiristors - TRIACs, Transistors - JFETs, Diodes - RF and Transistors - Bipolè (BJT) - Single ...
- Avantaj konpetitif:
- We specialize in Vishay Siliconix IRFBE20STRL electronic components. IRFBE20STRL can be shipped within 24 hours after order. If you have any demands for IRFBE20STRL, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRFBE20STRL Atribi pwodwi yo
Nimewo Pati :
IRFBE20STRL
Manifakti :
Vishay Siliconix
Deskripsyon :
MOSFET N-CH 800V 1.8A D2PAK
Seri :
-
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
800V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
1.8A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
6.5 Ohm @ 1.1A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
38nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
530pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
-
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
D2PAK
Pake / Ka :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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