MMIX1F360N15T2 Pricing (USD) [2818PC Stock]
- 1 pcs$16.98918
- 20 pcs$16.90466
- Nimewo Pati:
- MMIX1F360N15T2
- Manifakti:
- IXYS
- Detaye deskripsyon:
- MOSFET N-CH 150V 235A.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - JFETs, Tiristors - DIACs, SIDACs, Diodes - Zener - Arrays, Tiristors - SCR - Modil yo, Transistors - Bipolè (BJT) - Arrays, Transistors - Pwogramasyon Unijunction, Transistors - IGBTs - Single and Transistors - IGBTs - Arrays ...
- Avantaj konpetitif:
- We specialize in IXYS MMIX1F360N15T2 electronic components. MMIX1F360N15T2 can be shipped within 24 hours after order. If you have any demands for MMIX1F360N15T2, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
MMIX1F360N15T2 Atribi pwodwi yo
Nimewo Pati :
MMIX1F360N15T2
Manifakti :
IXYS
Deskripsyon :
MOSFET N-CH 150V 235A
Seri :
GigaMOS™, TrenchT2™
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
150V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
235A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
4.4 mOhm @ 100A, 10V
Vgs (th) (Max) @ Id :
5V @ 8mA
Chaje Gate (Qg) (Max) @ Vgs :
715nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
47500pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
680W (Tc)
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
24-SMPD
Pake / Ka :
24-PowerSMD, 21 Leads
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