RJU002N06FRAT106 Pricing (USD) [1230545PC Stock]
- 1 pcs$0.03006
- Nimewo Pati:
- RJU002N06FRAT106
- Manifakti:
- Rohm Semiconductor
- Detaye deskripsyon:
- 2.5V DRIVE NCH MOSFET CORRESPON.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Rèkteur - Arrays, Diodes - RF, Transistors - Objektif espesyal, Transistors - FETs, MOSFETs - Single, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - IGBTs - Modil yo, Tiristors - SCR and Diodes - Zener - Single ...
- Avantaj konpetitif:
- We specialize in Rohm Semiconductor RJU002N06FRAT106 electronic components. RJU002N06FRAT106 can be shipped within 24 hours after order. If you have any demands for RJU002N06FRAT106, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
RJU002N06FRAT106 Atribi pwodwi yo
Nimewo Pati :
RJU002N06FRAT106
Manifakti :
Rohm Semiconductor
Deskripsyon :
2.5V DRIVE NCH MOSFET CORRESPON
Seri :
Automotive, AEC-Q101
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
200mA (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
2.5V, 4.5V
RD sou (Max) @ Id, Vgs :
2.3 Ohm @ 200mA, 4.5V
Vgs (th) (Max) @ Id :
1.5V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs :
-
Vgs (Max) :
±12V
Antre kapasite (Ciss) (Max) @ Vds :
18pF @ 10V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
200mW (Ta)
Operating Tanperati :
150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
UMT3
Pake / Ka :
SC-70, SOT-323
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