Manifakti :
Infineon Technologies
Deskripsyon :
MOSFET 2N-CH 30V 5.3A 8SOIC
FET Kalite :
2 N-Channel (Dual)
Karakteristik FET :
Logic Level Gate
Drenaj nan Voltage Sous (Vdss) :
30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
5.3A
RD sou (Max) @ Id, Vgs :
50 mOhm @ 2.7A, 10V
Vgs (th) (Max) @ Id :
3V @ 100µA
Chaje Gate (Qg) (Max) @ Vgs :
21nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
515pF @ 25V
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
8-SOIC (0.154", 3.90mm Width)
Pake Aparèy Founisè :
8-SO