STB37N60DM2AG Pricing (USD) [31085PC Stock]
- 1 pcs$1.32583
- 1,000 pcs$1.18022
- Nimewo Pati:
- STB37N60DM2AG
- Manifakti:
- STMicroelectronics
- Detaye deskripsyon:
- MOSFET N-CH 600V 28A.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - DIACs, SIDACs, Tiristors - TRIACs, Transistors - IGBTs - Modil yo, Transistors - IGBTs - Arrays, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - Bipolè (BJT) - Single, Transistors - Bipolè (BJT) - Arrays and Modil pouvwa chofè ...
- Avantaj konpetitif:
- We specialize in STMicroelectronics STB37N60DM2AG electronic components. STB37N60DM2AG can be shipped within 24 hours after order. If you have any demands for STB37N60DM2AG, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
STB37N60DM2AG Atribi pwodwi yo
Nimewo Pati :
STB37N60DM2AG
Manifakti :
STMicroelectronics
Deskripsyon :
MOSFET N-CH 600V 28A
Seri :
Automotive, AEC-Q101, MDmesh™ DM2
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
600V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
28A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
110 mOhm @ 14A, 10V
Vgs (th) (Max) @ Id :
5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
54nC @ 10V
Vgs (Max) :
±25V
Antre kapasite (Ciss) (Max) @ Vds :
2400pF @ 100V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
210W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
D2PAK
Pake / Ka :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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