STMicroelectronics - SCTWA10N120

KEY Part #: K6416113

SCTWA10N120 Pricing (USD) [12308PC Stock]

  • 1 pcs$3.36518
  • 600 pcs$3.34844

Nimewo Pati:
SCTWA10N120
Manifakti:
STMicroelectronics
Detaye deskripsyon:
IC POWER MOSFET 1200V HIP247.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Zener - Single, Transistors - FETs, MOSFETs - RF, Transistors - IGBTs - Arrays, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - Bipolè (BJT) - Arrays, Diodes - Zener - Arrays, Transistors - JFETs and Transistors - FETs, MOSFETs - Arrays ...
Avantaj konpetitif:
We specialize in STMicroelectronics SCTWA10N120 electronic components. SCTWA10N120 can be shipped within 24 hours after order. If you have any demands for SCTWA10N120, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SCTWA10N120 Atribi pwodwi yo

Nimewo Pati : SCTWA10N120
Manifakti : STMicroelectronics
Deskripsyon : IC POWER MOSFET 1200V HIP247
Seri : *
Estati Pati : Active
FET Kalite : -
Teknoloji : -
Drenaj nan Voltage Sous (Vdss) : -
Kouran - Drenaj Kontinye (Id) @ 25 ° C : -
Drive Voltage (Max Rds Sou, Min RDS Sou) : -
RD sou (Max) @ Id, Vgs : -
Vgs (th) (Max) @ Id : -
Chaje Gate (Qg) (Max) @ Vgs : -
Vgs (Max) : -
Antre kapasite (Ciss) (Max) @ Vds : -
Karakteristik FET : -
Disipasyon Pouvwa (Max) : -
Operating Tanperati : -
Mounting Kalite : -
Pake Aparèy Founisè : -
Pake / Ka : -

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