[8791PC Stock]
- Nimewo Pati:
- H7N1002LS-E
- Manifakti:
- Renesas Electronics America
- Detaye deskripsyon:
- MOSFET N-CH 100V LDPAK.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - SCR, Diodes - RF, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - Objektif espesyal, Tiristors - SCR - Modil yo, Transistors - FETs, MOSFETs - RF, Diodes - Rèkteur - Single and Transistors - Pwogramasyon Unijunction ...
- Avantaj konpetitif:
- We specialize in Renesas Electronics America H7N1002LS-E electronic components. H7N1002LS-E can be shipped within 24 hours after order. If you have any demands for H7N1002LS-E, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
H7N1002LS-E Atribi pwodwi yo
Nimewo Pati :
H7N1002LS-E
Manifakti :
Renesas Electronics America
Deskripsyon :
MOSFET N-CH 100V LDPAK
Seri :
-
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
75A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
4.5V, 10V
RD sou (Max) @ Id, Vgs :
10 mOhm @ 37.5A, 10V
Vgs (th) (Max) @ Id :
-
Chaje Gate (Qg) (Max) @ Vgs :
155nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
9700pF @ 10V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
100W (Tc)
Operating Tanperati :
150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
4-LDPAK
Pake / Ka :
SC-83
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