IRFI9530GPBF Pricing (USD) [44961PC Stock]
- 1 pcs$0.78603
- 10 pcs$0.70826
- 100 pcs$0.56916
- 500 pcs$0.44267
- 1,000 pcs$0.34695
- Nimewo Pati:
- IRFI9530GPBF
- Manifakti:
- Vishay Siliconix
- Detaye deskripsyon:
- MOSFET P-CH 100V 7.7A TO220FP.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - IGBTs - Arrays, Transistors - Objektif espesyal, Transistors - IGBTs - Modil yo, Tiristors - SCR - Modil yo, Modil pouvwa chofè and Transistors - FETs, MOSFETs - Arrays ...
- Avantaj konpetitif:
- We specialize in Vishay Siliconix IRFI9530GPBF electronic components. IRFI9530GPBF can be shipped within 24 hours after order. If you have any demands for IRFI9530GPBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRFI9530GPBF Atribi pwodwi yo
Nimewo Pati :
IRFI9530GPBF
Manifakti :
Vishay Siliconix
Deskripsyon :
MOSFET P-CH 100V 7.7A TO220FP
Seri :
-
Estati Pati :
Active
FET Kalite :
P-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
7.7A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
300 mOhm @ 4.6A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
38nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
860pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
42W (Tc)
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-220-3
Pake / Ka :
TO-220-3 Full Pack, Isolated Tab
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