STU6N65M2 Pricing (USD) [54371PC Stock]
- 1 pcs$0.68568
- 10 pcs$0.60583
- 100 pcs$0.47889
- 500 pcs$0.37138
- 1,000 pcs$0.27734
- Nimewo Pati:
- STU6N65M2
- Manifakti:
- STMicroelectronics
- Detaye deskripsyon:
- MOSFET N-CH 650V 4A IPAK.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Single, Transistors - IGBTs - Arrays, Diodes - RF, Transistors - Bipolè (BJT) - Arrays, Tiristors - SCR - Modil yo, Diodes - Rèkteur - Single, Transistors - JFETs and Diodes - Bridge rèktifikateur ...
- Avantaj konpetitif:
- We specialize in STMicroelectronics STU6N65M2 electronic components. STU6N65M2 can be shipped within 24 hours after order. If you have any demands for STU6N65M2, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
STU6N65M2 Atribi pwodwi yo
Nimewo Pati :
STU6N65M2
Manifakti :
STMicroelectronics
Deskripsyon :
MOSFET N-CH 650V 4A IPAK
Seri :
MDmesh™
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
650V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
4A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
1.35 Ohm @ 2A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
9.8nC @ 10V
Vgs (Max) :
±25V
Antre kapasite (Ciss) (Max) @ Vds :
226pF @ 100V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
60W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
IPAK (TO-251)
Pake / Ka :
TO-251-3 Short Leads, IPak, TO-251AA
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