Vishay Siliconix - IRFI730GPBF

KEY Part #: K6393343

IRFI730GPBF Pricing (USD) [38171PC Stock]

  • 1 pcs$0.99508
  • 10 pcs$0.89766
  • 100 pcs$0.72126
  • 500 pcs$0.56097
  • 1,000 pcs$0.46481

Nimewo Pati:
IRFI730GPBF
Manifakti:
Vishay Siliconix
Detaye deskripsyon:
MOSFET N-CH 400V 3.7A TO220FP.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Transistors - Bipolè (BJT) - RF, Transistors - IGBTs - Modil yo, Diodes - RF, Tiristors - TRIACs, Diodes - Bridge rèktifikateur, Transistors - IGBTs - Arrays and Diodes - Rèkteur - Single ...
Avantaj konpetitif:
We specialize in Vishay Siliconix IRFI730GPBF electronic components. IRFI730GPBF can be shipped within 24 hours after order. If you have any demands for IRFI730GPBF, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IRFI730GPBF Atribi pwodwi yo

Nimewo Pati : IRFI730GPBF
Manifakti : Vishay Siliconix
Deskripsyon : MOSFET N-CH 400V 3.7A TO220FP
Seri : -
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 400V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 3.7A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 1 Ohm @ 2.1A, 10V
Vgs (th) (Max) @ Id : 4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 38nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 700pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 35W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : TO-220-3
Pake / Ka : TO-220-3 Full Pack, Isolated Tab